This book constitutes the proceedings of the 26th International Symposium on VLSI Design and Test, VDAT 2022, which took place in Jammu, India, in July 2022. The 32 regular papers and 16 short papers presented in this volume were carefully reviewed and selected from 220 submissions. They were organized in topical sections as follows: Devices and Technology; Sensors; Analog/Mixed Signal; Digital Design; Emerging Technologies and Memory; System Design.
GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results. GaN is the fastest emerging technology for RF circuits as wel...
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We are delighted to present the inaugural Frontiers in Cardiovascular Medicine “Rising Stars” article collection. This collection showcases the high-quality work of internationally recognized researchers in the early stages of their independent careers. All Rising Star researchers were individually nominated by the Chief Editors of the Journal in recognition of their potential to influence the future directions in their respective fields. The work presented here highlights the diversity of research performed across the entire breadth of cardiovascular medicine, including the elucidation of fundamental biology, the development of novel diagnostics or therapeutics, computational modelling approaches, and bioengineering strategies for regeneration.