Welcome to our book review site go-pdf.online!
You may have to Search all our reviewed books and magazines, click the sign up button below to create a free account.
Nanoelectronics for Next-Generation Integrated Circuits
The incessant scaling of complementary metal-oxide semiconductor (CMOS) technology has resulted in significant performance improvements in very-large-scale integration (VLSI) design techniques and system architectures. This trend is expected to continue in the future, but this requires breakthroughs in the design of nano-CMOS and post-CMOS technologies. Nanoelectronics refers to the possible future technologies beyond conventional CMOS scaling limits. This volume addresses the current state-of-the-art nanoelectronic technologies and presents potential options for next-generation integrated circuits. Nanoelectronics for Next-generation Integrated Circuits is a useful reference guide for researchers, engineers, and advanced students working on the frontier of the design and modeling of nanoelectronic devices and their integration aspects with future CMOS circuits. This comprehensive volume eloquently presents the design methodologies for spintronics memories, quantum-dot cellular automata, and post-CMOS FETs, including applications in emerging integrated circuit technologies.
CMOS Nanoelectronics
This book covers one of the most important device architectures that have been widely researched to extend the transistor scaling: FinFET. Starting with theory, the book discusses the advantages and the integration challenges of this device architecture. It addresses in detail the topics such as high-density fin patterning, gate stack design, and source/drain engineering, which have been considered challenges for the integration of FinFETs. The book also addresses circuit-related aspects, including the impact of variability on SRAM design, ESD design, and high-T operation. It discusses a new device concept: the junctionless nanowire FET.
Miniaturized Transistors
What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.
Recent Advances in Engineering Mathematics and Physics
This book gathers the proceedings of the 4th conference on Recent Advances in Engineering Math. & Physics (RAEMP 2019), which took place in Cairo, Egypt in December 2019. This international and interdisciplinary conference highlights essential research and developments in the field of Engineering Mathematics and Physics and related technologies and applications. The proceedings is organized to follow the main tracks of the conference: Advanced computational techniques in engineering and sciences; computational intelligence; photonics; physical measurements and big data analytics; physics and nano-technologies; and optimization and mathematical analysis.
Index Medicus
Vols. for 1963- include as pt. 2 of the Jan. issue: Medical subject headings.
Springer Handbook of Semiconductor Devices
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and ...
International Neurology
A truly global textbook for neurological practice Neurological disease varies in its presentations and pathologythroughout the world. In today’s interconnected world,neurologists need to be aware that patients can come from anywherein the world with presentations and pathologies that may not betypical of their local context. This unique textbook deals with the differences in etiology,genetics, age of onset and clinical presentations of neurologicaldisease internationally. This is the first book to take a trulyglobal approach to neurological illness. Consisting of 22 sections and 173 chapters with contributionsfrom experts in many countries, it serves as an invaluable guidefor physicians to expand their knowledge of different neurologicaldisorders around the world. More importantly it is a definitivesource of practical information to aid diagnosis and treatment.
